Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of...
Reexamination Certificate
2011-08-23
2011-08-23
Lee, Cheung (Department: 2812)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
C438S492000, C438S507000, C257SE21606, C257SE21703
Reexamination Certificate
active
08003546
ABSTRACT:
In a method of growing silicon (Si) using a reactor, a supercritical fluid including a silicon Si source and hydrogen flows in the reactor, and the Si source reacts with hydrogen. A base substrate of a solar cell may be formed with Si made using the method of growing silicon (Si). The supercritical fluid may be a fluid in which Si is not oxidized and may be, for example, a CO2supercritical fluid with a pressure of about 60 to about 200 atm. The Si source may be TriChloroSilane (TCS) (SiCl3H) or SiH4.
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Lee Chang-Soo
Lee Jung-Hyun
Ma Dong-joon
Harness & Dickey & Pierce P.L.C.
Lee Cheung
Samsung Electronics Co,. Ltd.
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