Method of growing silicon and method of manufacturing solar...

Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of...

Reexamination Certificate

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C438S492000, C438S507000, C257SE21606, C257SE21703

Reexamination Certificate

active

08003546

ABSTRACT:
In a method of growing silicon (Si) using a reactor, a supercritical fluid including a silicon Si source and hydrogen flows in the reactor, and the Si source reacts with hydrogen. A base substrate of a solar cell may be formed with Si made using the method of growing silicon (Si). The supercritical fluid may be a fluid in which Si is not oxidized and may be, for example, a CO2supercritical fluid with a pressure of about 60 to about 200 atm. The Si source may be TriChloroSilane (TCS) (SiCl3H) or SiH4.

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