Method of growing gate oxides

Details Method of growing gate oxides Method of growing gate oxides

1998-11-17

2000-11-07

Monin, Jr., Donald L.

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

By reaction with substrate

438275, 438766, 438783, 257616, H01L 2131

Patent

active

061436690

ABSTRACT:
A method for manufacturing a gate oxide film in a semiconductor device includes: preparing a semiconductor substrate having a first and a second active region; implanting germanium ions into the first active region; and forming a first and a second gate oxide films on the first and the second active regions, respectively, wherein the first gate oxide film is thicker than the second gate oxide film.

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S. Wolf, R. Tauber. Silicon Processing for the VLSI Era, vol. 1: Process Technology. Lattice Press, California, 1986. p. 280.
Doyle, B.; Soleimani, H.R.; Philipossian, A., Simultaneous Growth of Dlfferent Thickness Gate Oxides in Silicon CMOS Processing. IEEE Electron Device Letters, vol. 16, No. 7 Jul. 1995, pp. 301-302.

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