Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2003-03-20
2009-02-24
Nguyen, Dao H (Department: 2818)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S597000, C438S628000, C438S629000, C438S686000, C438S687000, C257S200000, C257S295000, C257SE21495, C257SE21585, C257SE27004
Reexamination Certificate
active
07494927
ABSTRACT:
A method for forming a conductive thin film includes depositing a metal oxide thin film on a substrate by an atomic layer deposition (ALD) process. The method further includes at least partially reducing the metal oxide thin film by exposing the metal oxide thin film to a reducing agent, thereby forming a seed layer. In one arrangement, the reducing agent comprises one or more organic compounds that contain at least one functional group selected from the group consisting of —OH, —CHO, and —COOH. In another arrangement, the reducing agent comprises an electric current.
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Elers Kai-Erik
Haukka Suvi
Kostamo Juhana
Soininen Pekka J.
ASM International N.V.
Knobbe Martens Olson & Bear LLP
Nguyen Dao H
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