Method of growing crystalline silicon overlayers on thin amorpho

Details Method of growing crystalline silicon overlayers on thin amorpho Method of growing crystalline silicon overlayers on thin amorpho

1999-03-25

2000-11-21

Bowers, Charles

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

On insulating substrate or layer

257 25, H01L 2120

Patent

active

061502421

ABSTRACT:
A method of forming a layer of crystalline silicon over silicon oxide and a resonant tunnel diode wherein there is provided a sufficiently clean (surface impurities<10.sup.13 /cm.sup.2), atomically smooth (rms roughness<3 Angstroms) crystalline silicon surface. Spaced apart regions of silicon oxide are formed on the surface sufficiently thin so that deposited silicon over the surface and silicon oxide will be capable of using the surface as a seed to form crystalline silicon with deposited silicon extending over the silicon oxide. The silicon is then deposited over the surface including the silicon oxide to provide the crystalline silicon over silicon oxide. The resonant tunnel diode is formed by forming a layer of silicon oxide over the deposited silicon, forming an electrically conductive layer over the layer of silicon oxide and removing the portions of the electrically conductive layer, the layer of silicon oxide and the deposited silicon from the interstices between the spaced apart regions of silicon oxide. The spaced apart regions of silicon oxide have a thickness of from about 10 to about 40 Angstroms and preferably about 15 Angstroms. The step of forming spaced apart regions comprises forming a layer of silicon oxide over surface, patterning the silicon oxide with a resist and etching the silicon oxide in patterned regions, leaving some silicon oxide. The resist is then removed and the remainder of the silicon oxide in the patterned region is removed down to the surface while concurrently removing a portion of the silicon oxide in the unpatterned region.

REFERENCES:
patent: 5422305 (1995-06-01), Seabaugh et al.
patent: 5606177 (1997-02-01), Wallace et al.

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