Method of growing as a channel region to reduce source/drain...

Details Method of growing as a channel region to reduce source/drain... Method of growing as a channel region to reduce source/drain...

2005-10-18

2005-10-18

Zarabian, Amir (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S156000, C438S173000, C438S175000

Reexamination Certificate

active

06955969

ABSTRACT:
A method of forming a channel region for a transistor includes forming a layer of silicon germanium (SiGe) above a substrate, forming an oxide layer above the SiGe layer wherein the oxide layer includes an aperture in a channel area and the aperture is filled with a SiGe feature, depositing a layer having a first thickness above the oxide layer and the SiGe feature, and forming source and drain regions in the layer.

REFERENCES:
patent: 6096590 (2000-08-01), Chan et al.
patent: 6339232 (2002-01-01), Takagi
patent: 6503833 (2003-01-01), Ajmera et al.
patent: 6537862 (2003-03-01), Song

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