Method of growing a thin film onto a substrate

Details Method of growing a thin film onto a substrate Method of growing a thin film onto a substrate

2005-04-19

2005-04-19

Hiteshew, Felisa (Department: 1765)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

Including change in a growth-influencing parameter

C117S101000, C117S102000

Reexamination Certificate

active

06881263

ABSTRACT:
The present invention relates to the production of thin films. In particular, the invention concerns a method of growing a thin film onto a substrate, in which method the substrate is placed in a reaction chamber and is subjected to surface reactions of a plurality of vapor-phase reactants according to the ALD method. The present invention is based on replacing the mechanical valves conventionally used for regulating the pulsing of the reactants, which valves tend to wear and intrude metallic particles into the process flow, with an improved precursor dosing system. The invention is characterized by choking the reactant flow between the vapour-phase pulses while still allowing a minimum flow of said reactant, and redirecting the reactant at these times to an other destination than the reaction chamber. The redirection is performed with an inactive gas, which is also used for ventilating the reaction chamber between the vapour-phase pulses.

REFERENCES:
patent: 4413022 (1983-11-01), Suntola et al.
patent: 6015590 (2000-01-01), Suntola et al.
patent: 0 671 484 (1994-03-01), None
patent: WO 0127347 (2001-04-01), None
patent: WO 0129280 (2001-04-01), None
“ALD Precursor Chemistry: Evolution and Future Challenges”; Leskelä, et al; J. Phys IV France 9 (1999) ; pp. 837-845.

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