Static information storage and retrieval – Read/write circuit – Precharge
Reexamination Certificate
2005-05-31
2005-05-31
Ho, Hoai (Department: 2818)
Static information storage and retrieval
Read/write circuit
Precharge
C365S149000, C365S233100
Reexamination Certificate
active
06901018
ABSTRACT:
A method for generating an initializing signal capable of preventing inner circuits installed in a semiconductor memory device from being initially unstably operated due to the application of external electric power. The method includes the steps of: (a) receiving a precharge command for precharging the semiconductor memory device; (b) activating the initializing signal to a first level in response to the received precharge command; (c) receiving a refresh command for refreshing the semiconductor memory device after receipt of the precharge command; (d) receiving a mode set command for setting an operational mode of the semiconductor memory device after receipt of the refresh command; and (e) deactivating the initializing signal to a second level in response to the received mode set command. An alternative method includes the step of (a) receiving a mode set command foe initializing an inner circuit in a semiconductor memory device and (b) generating a control signal in response to the received mode set command and using the control signal as the initializing signal.
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Bae Il-Man
Kim Jae-Hoon
Lee Jae-Hyeong
Ho Hoai
Marger Johnson & McCollom
Samsung Electronics Co Ltd.
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