Method of gap-filling using amplitude modulation radio...

Semiconductor device manufacturing: process – Chemical etching – Combined with coating step

Reexamination Certificate

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C438S771000, C438S798000, C257SE21546

Reexamination Certificate

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07605084

ABSTRACT:
A method of filling a gap on a substrate comprises disposing the substrate, on which the gap is formed, on a susceptor in a chamber; applying a source power to the chamber to generate plasmas into the chamber; supplying a process gas into the chamber; filling a thin film into a gap by applying a first bias power to the susceptor, an amplitude of the first bias power being periodically modulated; stopping supply of the process gas and cutting off the first bias power; and extinguish the plasmas in the chamber.

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patent: 6562190 (2003-05-01), Kuthi et al.
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patent: 7217658 (2007-05-01), Bayman et al.

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