Semiconductor device manufacturing: process – Chemical etching – Combined with coating step
Reexamination Certificate
2007-05-09
2009-10-20
Smoot, Stephen W (Department: 2813)
Semiconductor device manufacturing: process
Chemical etching
Combined with coating step
C438S771000, C438S798000, C257SE21546
Reexamination Certificate
active
07605084
ABSTRACT:
A method of filling a gap on a substrate comprises disposing the substrate, on which the gap is formed, on a susceptor in a chamber; applying a source power to the chamber to generate plasmas into the chamber; supplying a process gas into the chamber; filling a thin film into a gap by applying a first bias power to the susceptor, an amplitude of the first bias power being periodically modulated; stopping supply of the process gas and cutting off the first bias power; and extinguish the plasmas in the chamber.
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Han Jeong-Hoon
Kim Young-Rok
Yoo Jin-Hyuk
Jusung Engineering Co. Ltd.
Portland IP Law LLC
Smoot Stephen W
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