Semiconductor device manufacturing: process – Radiation or energy treatment modifying properties of... – Ionized irradiation
Reexamination Certificate
2009-09-13
2011-10-18
Smoot, Stephen W (Department: 2813)
Semiconductor device manufacturing: process
Radiation or energy treatment modifying properties of...
Ionized irradiation
C118S7230ER, C156S345440
Reexamination Certificate
active
08039406
ABSTRACT:
A method of filling a gap on a substrate comprises disposing the substrate, on which the gap is formed, on a susceptor in a chamber; applying a source power to the chamber to generate plasmas into the chamber; supplying a process gas into the chamber; filling a thin film into a gap by applying a first bias power to the susceptor, an amplitude of the first bias power being periodically modulated; stopping supply of the process gas and cutting off the first bias power; and extinguish the plasmas in the chamber.
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Han Jeong Hoon
Kim Young Rok
Yoo Jin Hyuk
Jusung Engineering Co. Ltd.
Portland IP Law LLC
Smoot Stephen W
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