Method of gap-filling using amplitude modulation...

Semiconductor device manufacturing: process – Radiation or energy treatment modifying properties of... – Ionized irradiation

Reexamination Certificate

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C118S7230ER, C156S345440

Reexamination Certificate

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08039406

ABSTRACT:
A method of filling a gap on a substrate comprises disposing the substrate, on which the gap is formed, on a susceptor in a chamber; applying a source power to the chamber to generate plasmas into the chamber; supplying a process gas into the chamber; filling a thin film into a gap by applying a first bias power to the susceptor, an amplitude of the first bias power being periodically modulated; stopping supply of the process gas and cutting off the first bias power; and extinguish the plasmas in the chamber.

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