Method of forming wiring layer of semiconductor device

Details Method of forming wiring layer of semiconductor device Method of forming wiring layer of semiconductor device

2011-04-19

2011-04-19

Garber, Charles D (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

Reexamination Certificate

active

07928002

ABSTRACT:
A method of forming a wiring layer of a semiconductor device, includes forming a first interlayer insulating layer to have a first thickness corresponding to a part of the thickness of an interlayer insulating layer that is to be formed on a support layer and forming a first contact plug in the first interlayer insulating layer. The method further includes forming a second interlayer insulating layer to have a second thickness on the first contact plug and the first interlayer insulating layer, thereby forming the interlayer insulating layer, wherein the second thickness corresponds to the rest of the thickness of the interlayer insulating layer, and forming a second contact plug connected to the first contact plug in the second interlayer insulating layer, thereby forming a local wiring layer including the first contact plug and the second contact plug.

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