Method of forming wing gate transistor for integrated circuits

Details Method of forming wing gate transistor for integrated circuits Method of forming wing gate transistor for integrated circuits

2006-06-06

2006-06-06

Brewster, William M. (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S305000, C438S514000, C438S527000

Reexamination Certificate

active

07056799

ABSTRACT:
A system is provided for forming a semiconductor device. Layers of gate dielectric material, gate material, and cap material are formed on a semiconductor substrate. The cap material and a portion of the gate material are processed to form a cap and a gate body portion. A wing on the gate body portion is formed from a remaining portion of the gate material. The gate dielectric material under a portion of the wing on the gate body portion is removed to form a gate dielectric. A lightly-doped source/drain region is formed in the semiconductor substrate using the gate body portion and the wing.

REFERENCES:
patent: 6255165 (2001-07-01), Thurgate et al.
patent: 6306710 (2001-10-01), Long et al.
patent: 6482688 (2002-11-01), Hu et al.
patent: 6596599 (2003-07-01), Guo
patent: 6797593 (2004-09-01), Chakravarthi et al.
Stanley Wolf Ph.D. and Richard N. Tauber Ph.D. in Silicon Processing for the VLSI Era, vol. 1: Process Technology, Lattice Press, 1986, pp.. 191-194.

Affiliated with

Also associated with

Rating

Method of forming wing gate transistor for integrated circuits does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming wing gate transistor for integrated circuits, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming wing gate transistor for integrated circuits will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3669207