Method of forming undoped/in-situ doped/undoped polysilicon sand

Details Method of forming undoped/in-situ doped/undoped polysilicon sand Method of forming undoped/in-situ doped/undoped polysilicon sand

1996-10-11

1998-11-24

Bowers, Charles

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438261, 438264, H01L 21336

Patent

active

058406077

ABSTRACT:
The present invention provides a method for forming a transistor having a stacked gate electrode structure with two gates; a lower floating gate and an upper control gate. The floating gate is formed of three polysilicon layers--undoped/doped/undoped polysilicon layers. A substrate is provided having a tunnel oxide layer 20. Then sequentially a first undoped, first doped, and second undoped polysilicon layers 22,24,26 are formed over the tunnel oxide layer thereby forming a lower floating gate layer 22, 24, 26. An intergate dielectric layer 28,30,32 is then formed over the second undoped polysilicon layer 26. Next, an upper control gate 36 and a cap oxide layer are formed over the intergate dielectric layer 28,30,32. The stacked two gate electrode structure is formed by patterning the above mentioned layers. Then spaced source and drain regions 44 are formed on opposite sides of the stacked gate structure thereby completing the transistor.

REFERENCES:
patent: 4441249 (1984-04-01), Alspector et al.
patent: 4782033 (1988-11-01), Gierisch et al.
patent: 4874716 (1989-10-01), Rao
patent: 4978637 (1990-12-01), Liou et al.
patent: 4992391 (1991-02-01), Wang
patent: 5210047 (1993-05-01), Woo et al.
patent: 5256894 (1993-10-01), Shino
patent: 5272099 (1993-12-01), Chou et al.
patent: 5395799 (1995-03-01), Yu
patent: 5441904 (1995-08-01), Kim et al.
patent: 5445984 (1995-08-01), Hong et al.

Affiliated with

Also associated with

Rating

Method of forming undoped/in-situ doped/undoped polysilicon sand does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming undoped/in-situ doped/undoped polysilicon sand, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming undoped/in-situ doped/undoped polysilicon sand will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1701446