Method of forming tungsten pattern for a semiconductor device

Details Method of forming tungsten pattern for a semiconductor device Method of forming tungsten pattern for a semiconductor device

1999-01-13

2000-11-07

Nelms, David

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438685, H01L 2144

Patent

active

061436542

ABSTRACT:
A capping film having a lower etch rate than a tungsten film is formed thereon and a photoresist layer is formed on the capping film. Preferably, the capping film is a titanium-based layer or an aluminum-based layer. After a photoresist pattern is formed by exposing and developing the photoresist film, the tungsten film is patterned by a dry etch method. During the etching of the tungsten film, the capping film reacts with the etching material to form a polymer which serves as a hard mask for the tungsten film. Preferably, the capping film also has a lower reflectivity at the exposing wavelength for the photoresist than the tungsten film, so the exposure of the photoresist may be controlled. Alternatively, or additionally, an anti-reflective film is provided between the capping film and the photoresist to further reduce the effect of the reflection of the tungsten film. Thus, patterning failures can be prevented. Such a method is particularly advantageous when the tungsten film pattern formed thereby is to be used as a bit line in a semiconductor device, particularly a pattern having a design rule of 0.34 .mu.m or less.

REFERENCES:
patent: 5693556 (1997-12-01), Cleeves
patent: 5856238 (1999-01-01), Jung
patent: 5882999 (1999-03-01), Anderson et al.
patent: 5925501 (1999-07-01), Zhang et al.

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