Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-05-30
2006-05-30
Brewster, William M. (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S270000, C438S272000, C438S514000, C438S527000
Reexamination Certificate
active
07052963
ABSTRACT:
A “chained implant” technique forms a body region in a trench gated transistor. In one embodiment, a succession of “chained” implants can be performed at the same dose but different energies. In other embodiments different doses and energies can be used, and particularly, more than one dose can be used in a single device. This process produces a uniform body doping concentration and a steeper concentration gradient (at the body-drain junction), with a higher total body charge for a given threshold voltage, thereby reducing the vulnerability of the device to punchthrough breakdown. Additionally, the source-body junction does not, to a first order, affect the threshold voltage of the device, as it does in DMOS devices formed with conventional diffused body processes.
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S. M. Sze, Semiconductor Devices Physics and Technology, 1985, John Wiley and Sons, pp. 451-452.
Grabowski Wayne
Williams Richard K.
Advanced Analogic Technologies, Inc.
Brewster William M.
Millers David T.
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