Method of forming trench transistor and isolation trench

Details Method of forming trench transistor and isolation trench Method of forming trench transistor and isolation trench

1996-10-30

1998-07-14

Dang, Trung

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438256, 438257, 438430, 438424, H01L 21336

Patent

active

057803404

ABSTRACT:
An IGFET with a gate electrode in a transistor trench adjacent to an isolation trench is disclosed. The trenches are formed in a semiconductor substrate. A gate insulator is on a bottom surface of the transistor trench, insulative spacers are adjacent to opposing sidewalls of the transistor trench, and the gate electrode is on the gate insulator and spacers and is electrically isolated from the substrate. Substantially all of the gate electrode is within the transistor trench. A source and drain in the substrate are beneath and adjacent to the bottom surface of the transistor trench. The isolation trench is filled with an insulator and provides device isolation for the IGFET. Advantageously, the trenches are formed simultaneously using a single etch step.

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