Method of forming trench isolations

Details Method of forming trench isolations Method of forming trench isolations

2006-04-25

2006-04-25

Smith, Bradley K. (Department: 2891)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S427000, C438S424000

Reexamination Certificate

active

07033909

ABSTRACT:
Methods of forming trench isolations are provided. A method includes providing a semiconductor substrate having a cell array region and a peripheral region. At least one cell trench in the cell array region and at least one peripheral trench wider than the cell trench in the peripheral region of the substrate are formed. The cell and the peripheral trenches have sidewalls. A first dielectric layer that partially fills the cell and peripheral trenches is formed over the substrate. At least one photoresist pattern that exposes at least the cell trench partially filled with the first dielectric layer is formed over the substrate. The first dielectric layer formed on the sidewalls of the exposed cell trench is etched by using the photoresist pattern as a etch mask. Subsequently, the photoresist pattern is removed. A second dielectric layer filling the cell and peripheral trenches is formed over the substrate where the photoresist pattern is removed.

REFERENCES:
patent: 6756654 (2004-06-01), Heo et al.
patent: 2002/0076900 (2002-06-01), Park et al.

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