Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2008-11-25
2010-11-02
Pham, Thanh V (Department: 2894)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C257S621000, C257S774000, C257SE21597, C257SE23174, C438S584000
Reexamination Certificate
active
07825024
ABSTRACT:
A method of forming a semiconductor device having a through-silicon via (TSV) is provided. A semiconductor device is provided having a first dielectric layer formed thereon. One or more dielectric layers are formed over the first dielectric layer, such that each of the dielectric layers have a stacking structure, wherein the stacking structures in the one or more dielectric layers are vertically aligned. The stacking structures may be, for example, metal rings. The stacking structures are then removed to form a first recess. A second recess is formed by extending the first recess into the substrate. The second recess is filled with a conductive material to form the TSV.
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Huang Ching-Kun
Lee Song-Bor
Lin Chuan-Yi
Lin Sheng-Yuan
Munoz Andres
Pham Thanh V
Slater & Matsil L.L.P.
Taiwan Semiconductor Manufacturing Company , Ltd.
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