Method of forming thin film on substrate by reactive DC sputteri

Details Method of forming thin film on substrate by reactive DC sputteri Method of forming thin film on substrate by reactive DC sputteri

1995-02-21

1997-03-04

Nguyen, Nam

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

20429803, 20419212, C23C 1434

Patent

active

056075596

ABSTRACT:
A method of forming a metal oxide film on a substrate by a reactive DC sputtering device with introducing thereinto a reaction gas and an inert gas includes the steps of: (a) regulating a flow rate ratio or a pressure ratio of the reaction gas to the inert gas to not higher than 0.4; (b) increasing a power input to the sputtering device to a first predetermined value such that a discharge voltage increases to a maximum value and then decreases from the maximum value; and (c) decreasing the power input from the first predetermined value to a second predetermined value immediately after the discharge voltage starts to decrease from the maximum value so as to suppress a metal formation on the substrate, the steps (b) and (c) being alternately repeated for a certain period for completing the metal oxide formation on the substrate.

REFERENCES:
patent: 4166784 (1979-09-01), Chapin et al.
patent: 5108569 (1992-04-01), Gilboa et al.
patent: 5292417 (1994-03-01), Kugler
Patent Abstracts of Japan, vol. 13, No. 079, Feb. 22, 1989.
Patent Abstracts of Japan, vol. 13, No. 286, Jun. 29, 1989.

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