Method of forming thick silica-based film

Details Method of forming thick silica-based film Method of forming thick silica-based film

2006-04-24

2009-02-17

Lee, Hsien-ming (Department: 2823)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Multiple layers

C438S778000, C438S780000, C428S447000, C428S451000, C257SE21024

Reexamination Certificate

active

07491651

ABSTRACT:
A silica-based coating film on a substrate surface is prepared by forming a reaction mixture comprising a tetraalkoxysilicon compound (A) and/or an alkyl/alkoxy silane compound (B), an alcohol (C), and oxalic acid (D), in such ratios that the amount of alcohol (C) ranges from 0.5 to 100 mols per mol of all alkoxy groups present in the silicon compounds (A) and (B), and the amount of oxalic acid (D) ranges from 0.2 to 2 mols per mol of all alkoxy groups in the silicon compounds (A) and (B), and while maintaining the mixture at a SiO2concentration ranging from 0.5 to 11%, as calculated from silicon atoms in the mixture, by means of the alcohol (C); heating the reaction mixture at a temperature ranging from 50 to 180° C. until the total remaining amount of the silicon compounds (A) and (B) in the reaction mixture is not more than 5 mol %, to form a solution of a polysiloxane having a number average molecular weight, calculated on the basis of a polystyrene standard, ranging from 2,000 to 15,000; applying a coating fluid containing the solution of the polysiloxane onto a substrate surface; and thermally curing a coating film obtained by the application, at a temperature ranging from 80 to 600° C.

REFERENCES:
patent: 4277525 (1981-07-01), Nakayama et al.
patent: 4719125 (1988-01-01), Anello et al.
patent: 4865649 (1989-09-01), Kashiwagi et al.
patent: 5766673 (1998-06-01), Nogami et al.
patent: 5800926 (1998-09-01), Nogami et al.
patent: 5880187 (1999-03-01), Kawazu et al.
patent: 6472012 (2002-10-01), Nakada et al.
patent: 6548426 (2003-04-01), Suzuki et al.
patent: 7211522 (2007-05-01), Motoyama et al.
patent: 0 776 925 (1997-06-01), None
patent: 0 790 522 (1997-08-01), None
patent: 1 108 692 (2001-06-01), None
patent: 62-88327 (1987-04-01), None
patent: 63241076 (1988-10-01), None
patent: 3-126612 (1991-05-01), None
patent: 7-233271 (1995-09-01), None
patent: 8-27419 (1996-01-01), None
patent: 9-281502 (1997-10-01), None
patent: 11-5946 (1999-01-01), None
patent: 2000-344894 (2000-12-01), None
patent: 2001-77105 (2001-03-01), None
patent: 2001-308089 (2001-11-01), None
patent: 07-286136 (2005-10-01), None
patent: 10-0333570 (2002-11-01), None
U.S. Appl. No. 10/583,557, filed Jun. 19, 2006, Motoyama et al.
U.S. Appl. No. 10/583,559, filed Jun. 19, 2006, Tani et al.
U.S. Appl. No. 11/409,086, filed Apr. 24, 2006, Motoyama et al.
U.S. Appl. No. 11/449,638, filed Jun. 9, 2006, Tani et al.

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