Method of forming thick silica-based film

Details Method of forming thick silica-based film Method of forming thick silica-based film

2007-05-01

2007-05-01

Lee, Hsien-Ming (Department: 2823)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Multiple layers

C438S778000, C438S780000, C427S058000, C427S168000, C428S447000, C428S451000

Reexamination Certificate

active

10474514

ABSTRACT:
The present invention provides a process for forming a silica-based coating film, characterized by heating a reaction mixture comprising a silicon compound (A) represented by Si (OR)4and/or a silicon compound (B) represented by R1nSi (OR2)4−n(wherein n is an integer of from 1 to 3), an alcohol (C) represented by R3CH2OH and oxalic acid (D) in specific ratios, at a temperature of from 50 to 180° C. in the absence of water, to form a solution of a polysiloxane having a number average molecular weight, as calculated as polystyrene, of from 2,000 to 15,000, applying a coating fluid containing such a solution on a substrate surface, and thermally curing a coating film obtained by such coating, at a temperature of from 80 to 600° C., and such a coating film having a film thickness of from 0.5 to 5 μm, a coating fluid to be used for such a coating film, and a process for producing such a coating fluid.

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