Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1995-12-19
2000-08-29
Everhart, Caridad
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
257751, 257774, 257760, H01L 2348
Patent
active
061113190
ABSTRACT:
A method is provided of forming a small geometry via or contact of a semiconductor integrated circuit, and an integrated circuit formed according to the same, is disclosed. According to a first disclosed embodiment, an opening is formed partially through an insulating layer overlying a conductive region. Sidewall spacers are formed along the sidewalls of the opening. The remaining insulating layer is etched to expose the underlying conductive region. The contact dimension of the opening is smaller than the opening which can be printed from modern photolithography techniques. According to an alternate embodiment, the opening in the insulating layer expose the underlying conductive region. A polysilicon layer is formed over the insulating layer and in the opening. The polysilicon is oxidized to form a thick oxide in the opening and is etched back to form oxidized polysilicon sidewall spacers which decrease the contact dimension of the opening. According to a further alternate embodiment, an etch stop layer is formed between the insulating layer and conductive region and an opening is formed in the insulating layer exposing the etch stop layer. A sidewall spacer film is formed over the insulating layer and the etch stop layer, both layers having a similar etch rate for a given etchant. The etch stop and spacer layers are etched in the opening to expose the underlying conductive layer thereby forming a contiguous sidewall spacer and etch stop layer on the sides of and under the insulating layer, thereby decreasing the contact dimension of the opening.
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Liou Fu-Tai
Zamanian Mehdi
Everhart Caridad
Galanthay Theodore E.
Jorgenson Lisa K.
STMicroelectronics Inc.
Venglarik Dan
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