Semiconductor device manufacturing: process – Packaging or treatment of packaged semiconductor – Assembly of plural semiconductive substrates each possessing...
Reexamination Certificate
2009-06-09
2011-10-18
Lee, Hsien Ming (Department: 2823)
Semiconductor device manufacturing: process
Packaging or treatment of packaged semiconductor
Assembly of plural semiconductive substrates each possessing...
C438S108000, C438S015000, C438S025000, C438S127000, C257S100000, C257S433000, C257SE21499, C257SE23012, C257SE51020
Reexamination Certificate
active
08039303
ABSTRACT:
A semiconductor device is made by forming a first conductive layer over a sacrificial carrier. A conductive pillar is formed over the first conductive layer. An active surface of a semiconductor die is mounted to the carrier. An encapsulant is deposited over the semiconductor die and around the conductive pillar. The carrier and adhesive layer are removed. A stress relief insulating layer is formed over the active surface of the semiconductor die and a first surface of the encapsulant. The stress relief insulating layer has a first thickness over the semiconductor die and a second thickness less than the first thickness over the encapsulant. A first interconnect structure is formed over the stress relief insulating layer. A second interconnect structure is formed over a second surface of encapsulant opposite the first interconnect structure. The first and second interconnect structures are electrically connected through the conductive pillar.
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Chow Seng Guan
Lin Yaojian
Shim Il Kwon
Lee Hsien Ming
Robert D. Atkins Patent Law Group
STATS ChipPAC Ltd.
Swanson Walter H
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