Method of forming strain-causing layer for MOS transistors...

Details Method of forming strain-causing layer for MOS transistors... Method of forming strain-causing layer for MOS transistors...

2007-10-29

2010-06-01

Garber, Charles D (Department: 2812)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Multiple layers

Reexamination Certificate

active

07727903

ABSTRACT:
A method of forming a strain-causing layer for MOS transistors is provided, which is applied to a substrate having a plurality of gate structures of the MOS transistors thereon. A non-conformal stressed film that is thicker on the gate structures than between the gate structures is formed over the substrate. The non-conformal stressed film is then etched, without an etching mask thereon, to remove portions thereof between the gate structures and disconnect the stressed film between the gate structures. At least one extra stressed film may be further formed over the substrate, wherein each extra stressed film has the same type of stress as the above stressed film and is connected or disconnected between the gate structures.

REFERENCES:
patent: 5342478 (1994-08-01), Welbourn
patent: 2006/0091471 (2006-05-01), Frohberg et al.
patent: 2008/0020591 (2008-01-01), Balseanu et al.
patent: 2008/0054314 (2008-03-01), Frohberg et al.

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