Method of forming stepped recesses for embedded strain...

Details Method of forming stepped recesses for embedded strain... Method of forming stepped recesses for embedded strain...

2008-05-12

2009-12-15

Smith, Matthew (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S514000, C257SE21085

Reexamination Certificate

active

07632727

ABSTRACT:
A method of fabricating a semiconductor transistor device is provided. The fabrication method begins by forming a gate structure overlying a layer of semiconductor material, such as silicon. Then, spacers are formed about the sidewalls of the gate structure. Next, ions of an amorphizing species are implanted into the semiconductor material at a tilted angle toward the gate structure. The gate structure and the spacers are used as an ion implantation mask during this step. The ions form amorphized regions in the semiconductor material. Thereafter, the amorphized regions are selectively removed, resulting in corresponding recesses in the semiconductor material. In addition, the recesses are filled with stress inducing semiconductor material, and fabrication of the semiconductor transistor device is completed.

REFERENCES:
patent: 7071046 (2006-07-01), Yang et al.
patent: 7429775 (2008-09-01), Nayak et al.
patent: 2008/0128746 (2008-06-01), Wang

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