Method of forming source/drain region of semiconductor device

Details Method of forming source/drain region of semiconductor device Method of forming source/drain region of semiconductor device

2007-12-25

2007-12-25

Picardat, Kevin M. (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S231000

Reexamination Certificate

active

11399877

ABSTRACT:
A method of forming a source/drain region of a semiconductor device includes forming a photoresist pattern through which an NMOS region of a semiconductor substrate is exposed, and then performing an ion implant process to form NMOS LDD regions in the semiconductor substrate of the NMOS region. An ion implant process is performed to form PMOS pocket regions in a PMOS region of the semiconductor substrate. Spacers are formed on sidewalls of a PMOS gate electrode pattern and sidewalls of an NMOS gate electrode pattern, and an ion implant process is performed to form PMOS source/drain regions in the semiconductor substrate in which the PMOS pocket regions are formed. An ion implant process is performed to form NMOS source/drain regions in the semiconductor substrate in which the NMOS LDD regions are formed.

REFERENCES:
patent: 5296401 (1994-03-01), Mitsui et al.
patent: 5773199 (1998-06-01), Linliu et al.
patent: 5795801 (1998-08-01), Lee
patent: 6066563 (2000-05-01), Nagashima
patent: 6090652 (2000-07-01), Kim
patent: 2001/0034093 (2001-10-01), Matsuzaki et al.
patent: 2005/0253173 (2005-11-01), Wang et al.
patent: 10-173172 (1998-06-01), None
patent: 100214468 (1999-05-01), None
patent: 10-2002-0095911 (2002-12-01), None
patent: 10-2005-0005162 (2005-01-01), None

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