Method of forming solder bump with reduced surface defects

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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Details

C438S577000, C438S951000, C257SE27155

Reexamination Certificate

active

07132358

ABSTRACT:
A method of forming a solder bump may involve forming a first photoresist pattern on a wafer having a pad. The first photoresist pattern may have an opening that exposes a portion of the pad. A first under bump metallurgy (UBM) layer may be formed on the pad, and a second UBM layer may be formed on the first photoresist pattern. A second photoresist pattern may be formed that exposes the first UBM layer and covers the second UBM layer. A solder bump may be formed in the opening. The second photoresist pattern and the first photoresist pattern may be removed using a stripper, thereby removing the second UBM layer by a lift-off method.

REFERENCES:
patent: 3700497 (1972-10-01), Epifano et al.
patent: 5310669 (1994-05-01), Richmond et al.
patent: 5888892 (1999-03-01), Yanagida
patent: 6372545 (2002-04-01), Fan et al.
patent: 11-317418 (1999-11-01), None

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