Method of forming SOI-like structure in a bulk semiconductor...

Details Method of forming SOI-like structure in a bulk semiconductor... Method of forming SOI-like structure in a bulk semiconductor...

2007-01-02

2007-01-02

Smith, Zandra V. (Department: 2822)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S221000, C438S296000, C438S445000

Reexamination Certificate

active

10847607

ABSTRACT:
Bulk silicon is transformed into an SOI-like structure by annealing. Trenches are formed in a bulk substrate to define device sites. The lower portions of the trenches are annealed at low pressure in a hydrogen atmosphere. This transforms the lower trench portions to expanded, spheroidal voids that extend under the device sites. Neighboring voids each reside about half way under an intervening site. A silicon-consuming process forms a liner on the walls of the voids, with the liners on neighboring voids abutting to isolate the intervening device site from the substrate and other device sites.

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