Method of forming single crystal silicon thin film using...

Details Method of forming single crystal silicon thin film using... Method of forming single crystal silicon thin film using...

2007-07-03

2007-07-03

Chaudhari, Chandra (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S487000, C257SE21134

Reexamination Certificate

active

11051338

ABSTRACT:
Provided is a method of forming a single crystal silicon thin film using an SLS method and a patterned grain boundary filtering region. The method of forming a single crystal silicon thin film by crystallizing an amorphous silicon layer deposited on a substrate, includes patterning the amorphous silicon layer to have a second region having a narrower width than the first and third regions to prevent grain boundaries from reaching the third region, wherein the second region connects a first region where the crystallization commences and the third region where a single crystal without beam boundaries can grow, partially forming a mask layer on the first region, and crystallizing the amorphous silicon layer by irradiating a laser beam from the first region to the third region in steps using a linear beam SLS method.

REFERENCES:
patent: 5817548 (1998-10-01), Noguchi et al.
patent: 6316338 (2001-11-01), Jung

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