Coating processes – Direct application of electrical – magnetic – wave – or... – Plasma
Patent
1995-04-10
1999-07-27
Pianalto, Bernard
Coating processes
Direct application of electrical, magnetic, wave, or...
Plasma
4272481, 427294, 427402, 427571, 427574, H05H 124
Patent
active
059287322
ABSTRACT:
A method of producing silicon oxy-nitride films is provided by utilizing a reactant gas mixture of silane, nitrous oxide and nitrogen at a low deposition temperature of less than 250.degree. C. by flowing the reactant gas mixture through a gas inlet manifold which is also an upper electrode in a plasma-enhanced chemical vapor deposition chamber. The gas inlet manifold is the upper plate of a parallel plate plasma chamber for communicating the reactant gas into the chamber. The plate has a plurality of apertures, each comprising an outlet at a chamber or processing side of the plate and an inlet spaced from the processing side, with the outlet being larger than the inlet for enhancing the dissociation and reactivity of the gas.
REFERENCES:
patent: 4543707 (1985-10-01), Ito et al.
patent: 4668365 (1987-05-01), Foster et al.
patent: 4717631 (1988-01-01), Kaganowicz et al.
patent: 4854263 (1989-08-01), Chang et al.
patent: 4895734 (1990-01-01), Yoshida et al.
patent: 5164339 (1992-11-01), Gimpelson
T.S. Eriksson et al., "RF-Sputtered Silicon-Oxy-Nitride Films," CIP 85 5th International Colloquium on Plasmas and Sputtering, Jun. 10-14, 1985, pp. 245-249.
T.S. Eriksson et al., "Infrared Optical Properties of Silicon Oxynitride Films: Experimental Data and Theoretical Interpretation," Journal of Applied Physics, vol. 60, No. 6, Sep. 15, 1986, pp. 2081-2091.
T. Hirao et al., "Properties of Silicon Oxynitride Films Prepared by ECR Plasma CVD Method," Japanese Journal of Applied Physics, vol. 27, No. 1, Jan. 1988, pp. L21-L23.
W.R. Knolle et al., "Characterization of Oxygen-Doped, Plasma-Deposited Silicon Nitride," Journal of the Electrochemical Society, vol. 135, No. 5, May 1988, pp. 1211-1217.
W.R. Knolle et al., "Plasma-Deposited Silicon Oxynitride from Silane, Nitrogen, and Carbon Dioxide or Carbon Monoxide or Nitric Oxide," Journal of the Electrochemical Society, vol. 139, No. 11, Nov. 1992, pp. 3310-3316 .
Law Kam
Olsen Jeff
Applied Materials Inc.
Morris Birgit E.
Pianalto Bernard
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