Method of forming SI tip by single etching process and its...

Details Method of forming SI tip by single etching process and its... Method of forming SI tip by single etching process and its...

2007-08-21

2007-08-21

Smith, Matthew (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S211000, C438S257000, C438S583000, C438S508000, C257SE21422

Reexamination Certificate

active

11050963

ABSTRACT:
The invention provides a method of forming a silicon tip by a single etching process, as well as a method of forming a tip floating gate to increase erase speed. Etching gases comprising (1) chlorine and/or (2) oxygen/helium are performed to form a silicon tip without bottom dimple. The invention may further control the tip angle by adjusting the etching parameters of gas compositions and ratios, chamber pressures, and radio frequency powers.

REFERENCES:
patent: 6174818 (2001-01-01), Tao et al.
patent: 6267121 (2001-07-01), Huang et al.
patent: 6653188 (2003-11-01), Huang et al.
patent: 6759300 (2004-07-01), Lay et al.
patent: 2006/0084243 (2006-04-01), Zhang et al.

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