Method of forming sharp beak of poly to improve erase speed in s

Details Method of forming sharp beak of poly to improve erase speed in s Method of forming sharp beak of poly to improve erase speed in s

1998-07-06

1999-10-19

Fourson, George

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

438266, 438264, H01L 21336

Patent

active

059703717

ABSTRACT:
A method is provided for forming a split-gate flash memory cell having a sharp beak of poly which substantially improves the programming erase speed of the cell. The sharp beak is formed through an extra and judicious wet etch of the polyoxide formed after the oxidation of the first polysilicon layer. The extra oxide dip causes the polyoxide to be removed peripherally thus forming a re-entrant cavity along the edge of the floating gate. The re-entrant beak is such that it does not get damaged during the subsequent process steps and is especially suited for cell sizes smaller than 0.35 micrometers.

REFERENCES:
patent: 5067108 (1991-11-01), Jeng
patent: 5422292 (1995-06-01), Hong et al.
patent: 5614747 (1997-03-01), Ahn et al.
patent: 5652161 (1997-07-01), Ahn

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