Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2011-02-08
2011-02-08
Chaudhari, Chandra (Department: 2891)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S549000, C438S552000, C257SE21474
Reexamination Certificate
active
07883973
ABSTRACT:
A method is provided of forming a semiconductor device. A substrate is provided having a dielectric layer formed thereover. The dielectric layer covers a protected region of the substrate, and has a first opening exposing a first unprotected region of the substrate. A first dopant is implanted into the first unprotected region through the first opening in the dielectric layer, and into the protected region through the dielectric layer.
REFERENCES:
patent: 6406974 (2002-06-01), Wu et al.
patent: 6716709 (2004-04-01), Springer et al.
Denison Marie
Pendharkar Sameer
Sridar Seetharaman
Brady III Wade J.
Chaudhari Chandra
Franz Warren L.
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
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