Method of forming semiconductor devices using gate electrode len

Details Method of forming semiconductor devices using gate electrode len Method of forming semiconductor devices using gate electrode len

1997-12-18

1999-01-26

Bowers, Charles

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438289, 438230, 438301, 257344, 257339, H01L 2576, H01L 21265

Patent

active

058638245

ABSTRACT:
A semiconductor device having a controlled drive current strength is produced by varying spacer width to accommodate any variation in gate electrode length from a desired value. After formation of the gate electrode on a substrate, the length is measured and compared to a desired value. Based on any differences between the measured and desired values, the width of spacer is determined in order to counteract the variation in gate electrode length. This results in maintaining the desired channel length after dopant implanting, to provide the desired drive current strength. The present process permits close control over the drive current strength of semiconductor devices and also decreased variation within and between lots and corresponding increases in productivity.

REFERENCES:
patent: 5733812 (1998-03-01), Ueda et al.
patent: 5789780 (1998-08-01), Fulford et al.

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