Method of forming semiconductor devices in which a cell gate...

Details Method of forming semiconductor devices in which a cell gate... Method of forming semiconductor devices in which a cell gate...

2007-01-03

2010-10-19

Le, Thao X (Department: 2892)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C257S211000, C257SE29170, C257SE21209

Reexamination Certificate

active

07816245

ABSTRACT:
A semiconductor device is formed by providing a semiconductor substrate comprising a cell region, a peripheral circuit region, and a resistor region, forming a device isolation layer on the semiconductor substrate so as to define an active region, forming a first insulating layer and a polysilicon pattern on the active region of the peripheral circuit region, forming a second insulating layer, a charge storage layer, and a third insulating layer on the active region of the cell region, forming a conductive layer on the semiconductor substrate, and patterning the conductive layer to form conductive patterns on the third insulating layer of the cell region, the polysilicon pattern of the active region of peripheral circuit region, and the semiconductor substrate of the resistor region, respectively.

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