Method of forming semiconductor devices in wafer assembly

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S111000, C438S110000, C438S680000

Reexamination Certificate

active

08003534

ABSTRACT:
An apparatus and method for holding a semiconductor device in a wafer. A bar is connected to the wafer. A first sidewall comprises a first end and a second, and is connected to the bar at its first end. A first tab comprises a first end and a second end, and is connected to the second end of the first sidewall at its first end and connected to the first side of the semiconductor device at its second end. The thickness of the first tab is less than the thickness of the bar and the thickness of the first sidewall.

REFERENCES:
patent: 4670092 (1987-06-01), Motamedi
patent: 5998234 (1999-12-01), Murata et al.
patent: 6016693 (2000-01-01), Viani et al.
patent: 6780767 (2004-08-01), Lutter
Chand et al., “Microfabricated Small Metal Cantilevers with Si Tip for Atomic Force Microscopy,” Journal of Microelectromechanical Systems, vol. 9, No. 1, Mar. 2000, p. 112.
Aberson et al., “Water—Level Separation on MEMS Die with Standard Pick—and-Place Machines,” http://www.collibbrys.com/files/pdf/ICMEMS2003.pdg.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method of forming semiconductor devices in wafer assembly does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming semiconductor devices in wafer assembly, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming semiconductor devices in wafer assembly will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2750761

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.