Method of forming semiconductor device having stacked...

Details Method of forming semiconductor device having stacked... Method of forming semiconductor device having stacked...

2009-07-15

2010-11-16

Thai, Luan C (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S152000, C438S154000, C438S597000, C438S157000, C438S618000, C438S637000, C257SE21476, C257SE21561, C257SE21703

Reexamination Certificate

active

07833847

ABSTRACT:
There is provided a method of forming a semiconductor device having stacked transistors. When forming a contact hole for connecting the stacked transistors to each other, ohmic layers on the bottom and the sidewall of the common contact hole are separately formed. As a result, the respective ohmic layers are optimally formed to meet requirements or conditions. Accordingly, the contact resistance of the common contact may be minimized so that it is possible to enhance the speed of the semiconductor device.

REFERENCES:
patent: 5612552 (1997-03-01), Owens
patent: 5872029 (1999-02-01), Gardner et al.
patent: 6075268 (2000-06-01), Gardner et al.
patent: 6232637 (2001-05-01), Gardner et al.
patent: 6259118 (2001-07-01), Kadosh et al.
patent: 6358828 (2002-03-01), Kadosh et al.
patent: 62-040716 (1997-02-01), None
patent: 2000-208644 (2000-07-01), None

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