Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2008-09-04
2009-08-25
Thai, Luan C (Department: 2891)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S152000, C438S154000, C438S597000, C438S157000, C438S618000, C438S637000, C257SE21476, C257SE21561, C257SE21703
Reexamination Certificate
active
07579225
ABSTRACT:
There is provided a method of forming a semiconductor device having stacked transistors. When forming a contact hole for connecting the stacked transistors to each other, ohmic layers on the bottom and the sidewall of the common contact hole are separately formed. As a result, the respective ohmic layers are optimally formed to meet requirements or conditions. Accordingly, the contact resistance of the common contact may be minimized so that it is possible to enhance the speed of the semiconductor device.
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patent: 5872029 (1999-02-01), Gardner et al.
patent: 6232637 (2001-05-01), Gardner et al.
patent: 62-040716 (1997-02-01), None
patent: 2000-208644 (2000-07-01), None
Choi Gil-Heyun
Jung Eun-Ji
Jung Sug-Woo
Kim Hyun-Su
Yun Jong-Ho
Myers Bigel Sibley & Sajovec P.A.
Samsung Electronics Co,. Ltd.
Thai Luan C
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