Method of forming semiconductor device having stacked...

Details Method of forming semiconductor device having stacked... Method of forming semiconductor device having stacked...

2006-04-04

2008-10-07

Thai, Luan (Department: 2891)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S618000, C438S637000

Reexamination Certificate

active

07432185

ABSTRACT:
There is provided a method of forming a semiconductor device having stacked transistors. When forming a contact hole for connecting the stacked transistors to each other, ohmic layers on the bottom and the sidewall of the common contact hole are separately formed. As a result, the respective ohmic layers are optimally formed to meet requirements or conditions. Accordingly, the contact resistance of the common contact may be minimized so that it is possible to enhance the speed of the semiconductor device.

REFERENCES:
patent: 5475240 (1995-12-01), Sakamoto
patent: 5612552 (1997-03-01), Owens
patent: 5670812 (1997-09-01), Adler et al.
patent: 5872029 (1999-02-01), Gardner et al.
patent: 6140675 (2000-10-01), Sugiura et al.
patent: 6232637 (2001-05-01), Gardner et al.
patent: 62-040716 (1997-02-01), None
patent: 2000-208644 (2000-07-01), None

Affiliated with

Also associated with

Rating

Method of forming semiconductor device having stacked... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming semiconductor device having stacked..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming semiconductor device having stacked... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4007203