Method of forming semiconductor device having...

Details Method of forming semiconductor device having... Method of forming semiconductor device having...

2011-02-22

2011-02-22

Dang, Phuc T (Department: 2892)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S199000, C438S269000, C257S339000, C257S392000

Reexamination Certificate

active

07892925

ABSTRACT:
A method of forming a semiconductor device is provided. A hollowed portion is formed over an active region of a semiconductor substrate. The bottom of the hollowed portion is lowered in level than the surface of an isolation region of the substrate. A first mask is formed in the hollowed portion, except on a side region that is adjacent to the boundary between the active region and the isolation region. A trench is formed in the side region of the active region by using the first mask and the isolation region as a mask.

REFERENCES:
patent: 7531413 (2009-05-01), Shin et al.
patent: 2007/0052041 (2007-03-01), Sorada et al.
patent: 2008/0099834 (2008-05-01), Willer
patent: 2009/0042396 (2009-02-01), Park et al.
patent: 2002-118255 (2002-04-01), None
patent: 2004/107452 (2004-12-01), None
patent: 2006-339514 (2006-12-01), None

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