Method of forming semiconductor compound film for...

Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – By reaction with substrate

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S022000, C438S048000, C438S775000, C438S777000

Reexamination Certificate

active

07091136

ABSTRACT:
A process of forming a compound film includes formulating a nano-powder material with a controlled overall composition and including particles of one solid solution. The nano-powder material is deposited on a substrate to form a layer on the substrate, and the layer is reacted in at least one suitable atmosphere to form the compound film. The compound film may be used in fabrication of a radiation detector or solar cell.

REFERENCES:
patent: 4798660 (1989-01-01), Ermer et al.
patent: 5561317 (1996-10-01), Momma et al.
patent: 5578503 (1996-11-01), Karg et al.
patent: 5665277 (1997-09-01), Johnson et al.
patent: 5731131 (1998-03-01), Momma et al.
patent: 5874684 (1999-02-01), Parker et al.
patent: 5985691 (1999-11-01), Basol et al.
patent: 6068800 (2000-05-01), Singh et al.
patent: 6204912 (2001-03-01), Tsuchiya et al.
patent: 6576355 (2003-06-01), Yadov et al.
patent: 6630257 (2003-10-01), Ye et al.
patent: 6635307 (2003-10-01), Huang et al.
patent: 6849109 (2005-02-01), Yadav et al.
patent: 6923946 (2005-08-01), Geohegan et al.
patent: 2001/0006869 (2001-07-01), Okamoto et al.
patent: 2002/0136896 (2002-09-01), Takikawa et al.
patent: 0 838 864 (1998-04-01), None
patent: 4-326507 (1992-11-01), None
patent: WO 99/17889 (1999-04-01), None
W.H. Bloss et al., Thin-Film Solar Cells, Progress In Photovoltaics: Research and Applications, vol. 3, pp. 3-24 (1995), Institute of Physical Electronics, University of Stuttgart, Stuttgart, Germany.
T. Arita et al., CulnSe2Films Prepared By Screen-Printing and Sintering Method, 1988 IEEE, pp. 1650-1655, Matsushita Battery Industrial Co., Ltd, Osaka, Japan.
Vervaet M. Burgelman et al., Screen Printing of C ulnSe2Films, pp. 4 80-483, Laboratory of Electronics, Ghent State University, Gent, Belgium.
P.R. Subramanian et al., Cu-Ga (Copper-Gallium), Binary Alloy Phase Diagrams, pp. 1410-1412.
P.R. Subramanian et al., The Cu-In (Copper-Indium) System, Bulletin of Alloy Phase Diagrams, vol. 10, No. 5, 1989, pp. 554-568 and 609-610, Carnegie-Mellon University.
T.J. Anderson et al., The Ga-In (Gallium-Indium) System, Journal of Phase Equilibria vol. 12 ,No. 1, 1991.
Max Hansen et al., Constitution of Binary Alloys, pp. 745-746, 1958, McGraw-Hill Book Company.
Bulent M. Basol, Low Cost Techniques for the Preparation of Cu(In,Ga)(Se,S)2Absorber Layers, Thin Solid Films 361-362(2000), pp. 514-519, International Solar Electric Technology, Inc., Inglewood, CA.
G. Norsworthy et al., CIS Film Growth By Metallic Ink Coating and Selenization, Solar Energy Materials & Solar Cells 60 (2000), pp. 127-134, International Solar Technology Inc. (ISET), Inglewood, CA.
H. Okamoto, Cu-In (Copper-Indium), Journal of Phase Equilibria, vol. 12, No. 6, 1991.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method of forming semiconductor compound film for... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming semiconductor compound film for..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming semiconductor compound film for... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3620435

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.