Method of forming self-aligned contact structure with...

Details Method of forming self-aligned contact structure with... Method of forming self-aligned contact structure with...

2005-02-15

2005-02-15

Clark, S. V. (Department: 2815)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S303000

Reexamination Certificate

active

06855610

ABSTRACT:
A method of forming a self-aligned contact structure with a locally etched conductive layer comprises the steps of: preparing a substrate formed with gate structures comprising a first conductive layer, a second conductive layer, and an insulating layer; depositing a photoresist material layer on the substrate; performing a lithographic step with a bit-line contact node photomask or a bit-line contact photomask to expose a portion of the surface of the substrate; etching the exposed second conductive layer with an etchant; removing the remaining photoresist material layer; forming a sidewall spacer on the sidewalls of each gate structure; forming a dielectric layer to cover the substrate; and performing lithographic and etching steps to remove the dielectric layer and to form self-aligned contact structure.

REFERENCES:
patent: 5989987 (1999-11-01), Kuo
patent: 6613684 (2003-09-01), Fujimoto
patent: 6633059 (2003-10-01), Hirade
patent: 6762110 (2004-07-01), Masuda
patent: 20040147084 (2004-07-01), Inoue et al.
Yamamoto, K., et al., “Control of Cleaning Performance of an Ammonia and Hydrogen Peroxide Mixture (APM) on the Basis of a Kinetic Reaction Model,”IEEE Transactions on Semiconductor Manufacturing 12(3):288-294, Aug. 1999.

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