Method of forming resist patterns using X-rays or electron beam

Details Method of forming resist patterns using X-rays or electron beam Method of forming resist patterns using X-rays or electron beam

1981-12-14

1983-08-09

Brammer, Jack P.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Electron beam imaging

20415914, 2041592, 430270, 430313, 430326, 430331, 528364, 528382, G03C 500

Patent

active

043979386

ABSTRACT:
In accordance with this invention, there is provided a positive resist medium for microlithography which is comprised of a film of a copolymer of sulfur dioxide and certain vinyl esters. A method of manufacturing microelectronic circuits and recording information utilizing the resist medium of this invention is also provided.

REFERENCES:
patent: 3884696 (1975-05-01), Bowden et al.
patent: 3890287 (1975-06-01), Moore et al.
patent: 3893127 (1975-07-01), Kaplan et al.
patent: 3931435 (1976-01-01), Gipstein et al.
patent: 3935331 (1976-01-01), Poliniak et al.
patent: 3935332 (1976-01-01), Poliniak et al.
patent: 4153741 (1979-05-01), Poliniak et al.
Chemical Abstract 85: 78465e, "Mechanism of Alternating Copolymerization of Sulfur Dioxide With Donor Monomers," Stoyachenko, I. L.
Thompson et al., Journal of the Electrochemical Society, Dec. 1973, pp. 1722-1726.

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