Method of forming resist pattern

Details Method of forming resist pattern Method of forming resist pattern

2005-03-29

2005-03-29

Huff, Mark F (Department: 1756)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Forming nonplanar surface

C427S273000

Reexamination Certificate

active

06872512

ABSTRACT:
A method of forming a resist pattern effectively controls the manner/style and the amount of modification of a resist pattern in its reflowing process, realizing a desired resist pattern with a desired accuracy even if the deformation amount of the resist pattern is increased in the reflowing process. A second layer is formed on a first layer and then, a first resist pattern is formed on the second layer. The second layer is selectively etched using the first resist pattern as a mask. Thereafter, wettability of at least part of an exposed area of the second or first layer from the first resist pattern is adjusted, thereby forming a wettability-adjusted part. The first resist pattern is modified in such a way as to extend to the wettability-adjusted area by reflowing the first resist pattern using an organic solvent, thereby forming a second resist pattern for selectively etching the first layer or the second layer.

REFERENCES:
patent: 4022932 (1977-05-01), Feng
patent: 5133840 (1992-07-01), Buchwalter et al.
patent: 6599582 (2003-07-01), Kiguchi et al.
patent: 20020027300 (2002-03-01), Hartmann et al.

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