Method of forming relatively continuous silicide layers for...

Details Method of forming relatively continuous silicide layers for... Method of forming relatively continuous silicide layers for...

2005-10-11

2010-02-16

Luu, Chuong A. (Department: 2892)

Semiconductor device manufacturing: process

Forming schottky junction

Using platinum group metal

C438S630000, C438S649000, C438S655000

Reexamination Certificate

active

07662707

ABSTRACT:
Methods of forming metal silicide layers in a semiconductor device are provided in which a first metal silicide layer may be formed on a substrate, where the first metal silicide layer comprises a plurality of fragments of a metal silicide that are separated by one or more gaps. A conductive material is selectively deposited into at least some of the gaps in the first metal silicide layer in order to electrically connect at least some of the plurality of fragments.

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