Method of forming polysilicon, thin film transistor using...

Details Method of forming polysilicon, thin film transistor using... Method of forming polysilicon, thin film transistor using...

2011-06-14

2011-06-14

Hu, Shouxiang (Department: 2811)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S149000, C438S166000, C438S488000, C257SE21133

Reexamination Certificate

active

07960220

ABSTRACT:
A method of forming polysilicon, a thin film transistor (TFT) using the polysilicon, and a method of fabricating the TFT are disclosed. The method of forming the polysilicon comprises: forming an insulating layer on a substrate; forming a first electrode and a second electrode on the insulating layer; forming at least one heater layer on the insulating layer so as to connect the first electrode and the second electrode; forming an amorphous material layer containing silicon on the heater layer(s); forming a through-hole under the heater layer(s) by etching the insulating layer; and crystallizing the amorphous material layer into a polysilicon layer by applying a voltage between the first electrode and the second electrode so as to heat the heater layer(s).

REFERENCES:
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patent: 6342409 (2002-01-01), Seo
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patent: 6614054 (2003-09-01), Ahn
patent: 2004/0203218 (2004-10-01), Kim et al.
patent: 2006/0292726 (2006-12-01), Akimoto et al.

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