Method of forming poly insulator poly capacitors by using a...

Details Method of forming poly insulator poly capacitors by using a... Method of forming poly insulator poly capacitors by using a...

2006-11-28

2006-11-28

Pham, Thanhha S. (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S239000, C438S649000, C438S664000

Reexamination Certificate

active

07141469

ABSTRACT:
A method of forming poly insulator poly capacitors by using self-aligned salicide process for mixed mode analog devices. These capacitors are formed in the self-aligned salicide process as stacked poly insulator poly (PIP) capacitors. In the self-aligned salicide process, a self-aligned salicide block process is needed to protect the the salicide formation process from electrostatic discharge (ESD) devices such as resistors or capacitors. The oxide layer of the self-aligned salicide block is used as the dielectric layer of the capacitors to form the PIP capacitor. Therefore, some process steps are omitted due to the formation of the PIP capacitors.

REFERENCES:
patent: 6303455 (2001-10-01), Hou et al.
patent: 2002/0142540 (2002-10-01), Katayama

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