Method of forming pattern structure

Details Method of forming pattern structure Method of forming pattern structure

2011-06-28

2011-06-28

Dang, Trung (Department: 2892)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S640000, C257SE21577

Reexamination Certificate

active

07968454

ABSTRACT:
A method of forming a pattern structure includes forming a thin film pattern on a substrate, the thin film pattern including depression portions with first bottom widths, forming a protection layer on the thin film pattern by implanting ions into the thin film pattern, and etching a lower portion of the thin film pattern selectively using the protection layer as a mask to increase the first bottom widths of the depression portions into second bottom widths.

REFERENCES:
patent: 2003/0008499 (2003-01-01), Kobayashi
patent: 2004/0056281 (2004-03-01), Shin et al.
patent: 2008/0258310 (2008-10-01), Fukumoto
patent: 2005-317863 (2005-11-01), None
patent: 10 2003 0002715 (2003-01-01), None
patent: 10 2005 0002010 (2005-01-01), None

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