Method of forming pattern in positive resist media

Details Method of forming pattern in positive resist media Method of forming pattern in positive resist media

1981-11-10

1983-08-02

Bowers, Jr., Charles L.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Electron beam imaging

430270, 430276, 430317, 430318, 430323, 430326, 430330, 430327, 427 431, 20415913, 156643, B05D 302, B05D 306, G03C 500

Patent

active

043967027

ABSTRACT:
This invention relates to novel poly(silane sulfone) copolymers having repeating units represented by the formula ##STR1## wherein R is alkyl and n is an integer. Positive resist recording media prepared from the subject copolymers demonstrate excellent sensitivity and resolution and are resistant to oxygen plasma etching.

REFERENCES:
patent: 4041190 (1977-08-01), Dubois et al.
patent: 4126712 (1978-11-01), Poliniak et al.
patent: 4158617 (1979-06-01), Eldred
patent: 4237208 (1980-12-01), Desai et al.
patent: 4262083 (1981-04-01), Pampalone et al.
patent: 4289845 (1981-09-01), Bowden et al.
patent: 4301231 (1981-11-01), Atarashi et al.
patent: 4357369 (1982-11-01), Kilichowski et al.
Bowden, M. J., "X. Electron Resist Reviews", CRL Critical Reviews in Solid State Sciences, Feb. 1979, pp. 251-262.

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