Method of forming pattern and making semiconductor device using

Details Method of forming pattern and making semiconductor device using Method of forming pattern and making semiconductor device using

1993-09-08

1995-08-15

McCamish, Marion E.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Electron beam imaging

430271, 430313, 430317, 430318, 430323, 430944, 430967, 430325, 216 47, 216 48, 216 51, 216 13, 216 67, 1566431, G03C 500, B44C 122

Patent

active

054418496

ABSTRACT:
Electrical charge accumulation caused by exposure to a charged particle beam during the formation of latent image pattern can be reduced and thus the positional deviation of the pattern by using a bottom-resist layer comprising a radiation-induced conductive composition. Highly integrated semiconductor device can be made easily and in high yields. The positional deviation can further be reduced by exposing a charge particle beam patterning apparatus substantially simultaneously with an actinic radiation such as ultraviolet light, X-ray, and infrared light.

REFERENCES:
patent: 4287277 (1981-09-01), Matsumoto et al.
patent: 4463265 (1984-07-01), Owen et al.
patent: 4702993 (1987-10-01), White et al.
European Search Report completed on Mar. 11, 1991 in The Hague, by Examiner U. P. Haenisch, citing 5 references contained herein (2 pages).
Annex to European Search Report citing U.S. Patent No. 4,702,993.
Database WPIL, No. 88-177833, Derwent Publications Ltd., London, GB.

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