Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Passivating of surface
Reexamination Certificate
2011-02-01
2011-02-01
Smith, Zandra V. (Department: 2822)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Passivating of surface
C438S500000, C438S507000, C257SE21002
Reexamination Certificate
active
07879636
ABSTRACT:
A method of forming a p-type gallium nitride based semiconductor without activation annealing is provided, and the method can provide a gallium nitride based semiconductor doped with a p-type dopant. A GaN semiconductor region17containing a p-type dopant is formed on a supporting base13in a reactor10. An organometallic source and ammonia are supplied to the reactor10to grow the GaN semiconductor layer17on a GaN semiconductor layer15. The GaN semiconductor is doped with a p-type dopant. Examples of the p-type dopant include magnesium. After the GaN semiconductor regions15and17are grown, an atmosphere19containing at least one of monomethylamine and monoethylamine is prepared in the reactor10. After the atmosphere19is prepared, a substrate temperature is decreased from the growth temperature of the GaN semiconductor region17. When the substrate temperature is lowered to room temperature after this film formation, a p-type GaN semiconductor17aand an epitaxial wafer E has been fabricated.
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Nakamura Takao
Ueno Masaki
Yoshizumi Yusuke
Novacek Christy L
Sartori Michael A.
Schwarz Steven J.
Smith Zandra V.
Sumitomo Electric Industries Ltd.
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